Low-power and high-performance techniques in global interconnect signaling

  • Authors:
  • Mohammad Moghaddam Tabrizi;Nasser Masoumi

  • Affiliations:
  • Advanced VLSI Lab., Department of Electronics, School of ECE, University College of Eng., University of Tehran, P.O.Box 14395 - 515, Tehran, Iran;Advanced VLSI Lab., Department of Electronics, School of ECE, University College of Eng., University of Tehran, P.O.Box 14395 - 515, Tehran, Iran

  • Venue:
  • Microelectronics Journal
  • Year:
  • 2009

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Abstract

In this article, two accurate and efficient approaches are proposed to optimize the power and delay of global interconnects in VLSI ICs. We modify the conventional buffer insertion and low swing methods for delay and power optimization of various lengths of the global interconnects. As such, we address non-equidistance buffer insertion (NEBI) and current-mode driver and receiver (CMDR) techniques along with our smart optimization procedure. It is shown that the optimized low swing CMDR technique is efficient for global interconnects of the length equal or longer than 5mm, and the improved buffer insertion technique, NEBI, is a perfect choice for the short global interconnects. Additionally, a random search algorithm known as simulated annealing (SA), improved by an intelligent method using a piecewise linear and exponential cost function, is employed for optimization of the power and delay. To this end, we have implemented a smart CAD tool that works interactively with HSPICE to achieve accurate and reliable design results. For verification purposes, several circuits are designed and simulated in 0.25, 0.18, and 0.13@mm CMOS technologies. The simulation results verify a significant reduction in the power and delay of global interconnects compared to other methods in the literature.