Analysis and justification of a simple, practical 2 1/2-D capacitance extraction methodology
DAC '97 Proceedings of the 34th annual Design Automation Conference
Fast and accurate quasi-three-dimensional capacitance determination of multilayer VLSI interconnects
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Convex Optimization
A unified non-rectangular device and circuit simulation model for timing and power
Proceedings of the 2006 IEEE/ACM international conference on Computer-aided design
Modeling and analysis of non-rectangular gate for post-lithography circuit simulation
Proceedings of the 44th annual Design Automation Conference
Proceedings of the 44th annual Design Automation Conference
A New Methodology for Interconnect Parasitics Extraction Considering Photo-Lithography Effects
ASP-DAC '07 Proceedings of the 2007 Asia and South Pacific Design Automation Conference
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Modern nanometer integrated circuits are patterned by sub-wavelength lithography with significant shape deviation from drawn layouts. Full-chip parasitics extraction faces new challenges since shape distortions such as line end rounding and corner rounding cannot be accurately characterized by existing layout parameter extraction (LPE) techniques which assume perfect polygons. A new LPE method and efficient shape approximation algorithms are proposed to account for the shape distortions. Preliminary results verified by field solver simulations indicate that accuracy of parasitics extraction can be significantly improved.