Diagnosis of MRAM write disturbance fault

Authors:
Chin-Lung Su;Chih-Wea Tsai;Ching-Yi Chen;Wan-Yu Lo;Cheng-Wen Wu;Ji-Jan Chen;Wen-Ching Wu;Chien-Chung Hung;Ming-Jer Kao
Affiliations:
R&D Department, Skymedi Corporation, Hsinchu, Taiwan;R&D Department, Skymedi Corporation, Hsinchu, Taiwan;Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan;Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan;Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan and SOC Technology Center, Industrial Technology Research Institute, Hsinchu, Taiwan;SOC Technology Center, Industrial Technology Research Institute, Hsinchu, Taiwan;SOC Technology Center, Industrial Technology Research Institute, Hsinchu, Taiwan;Electronics and Opto-Electronics Research Laboratory, Industrial Technology Research Institute, Hsinchu, Taiwan;Electronics and Opto-Electronics Research Laboratory, Industrial Technology Research Institute, Hsinchu, Taiwan
Venue:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Year:
2010

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Abstract

In this paper, we propose a new test method to detect write disturbance fault (WDF) for magnetic RAM (MRAM). Furthermore, an adaptive diagnosis algorithm (ADA) is also introduced to identify and diagnose the WDF for MRAM. The proposed test method can evaluate process stability and uniformity. We also develop a built-in self-test (BIST) circuit that supports the proposed WDF diagnosis test method. A 1-Mb toggle MRAM prototype chip with the proposed BIST circuit has been designed and fabricated using a special 0.15-µm CMOS technology. The BIST circuit overhead is only about 0.05% with respect to the 1-Mb MRAM. The test time is reduced by about 30% as compared with the test method without using the decision write mechanism. The chip measurement results show the efficiency of our proposed method.