Structured ASICs: Opportunities and Challenges
ICCD '03 Proceedings of the 21st International Conference on Computer Design
New Generation of Predictive Technology Model for Sub-45nm Design Exploration
ISQED '06 Proceedings of the 7th International Symposium on Quality Electronic Design
CMOL: Second life for silicon?
Microelectronics Journal
CMOS Control Enabled Single-Type FET NASIC
ISVLSI '08 Proceedings of the 2008 IEEE Computer Society Annual Symposium on VLSI
Combining 2-level logic families in grid-based nanoscale fabrics
NANOARCH '07 Proceedings of the 2007 IEEE International Symposium on Nanoscale Architectures
Validating cascading of crossbar circuits with an integrated device-circuit exploration
NANOARCH '09 Proceedings of the 2009 IEEE/ACM International Symposium on Nanoscale Architectures
Heterogeneous Two-Level Logic and Its Density and Fault Tolerance Implications in Nanoscale Fabrics
IEEE Transactions on Nanotechnology
Determining fundamental heat dissipation bounds for transistor-based nanocomputing paradigms
NANOARCH '11 Proceedings of the 2011 IEEE/ACM International Symposium on Nanoscale Architectures
Hybrid Graphene Nanoribbon-CMOS tunneling volatile memory fabric
NANOARCH '11 Proceedings of the 2011 IEEE/ACM International Symposium on Nanoscale Architectures
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We propose a novel nanofabric approach that mixes unconventional nanomanufacturing with CMOS manufacturing flow and design rules in order to build a reliable nanowire-CMOS fabric called N3ASIC with no new manufacturing constraints added. Active devices are formed on a dense uniform semiconductor nanowire array and standard area distributed pins/vias; metal interconnects route the signals in 3D. CMOS design rules are followed. Novel nanowire based devices are envisioned and characterized based on 3D physics modeling. Overall N3ASIC fabric design, associated circuits, interconnection approach, and a layer-by-layer assembly sequence for the fabric are introduced. Key system level metrics such as power, performance, and density for a nanoprocessor design built using N3ASICs were evaluated and compared against a functionally equivalent CMOS design synthesized with state-of-the-art CAD tools. We show that the N3ASICs version of the processor is 3X denser and 5X more power efficient for a comparable performance than the 16-nm scaled CMOS version even without any new/unknown-manufacturing requirement added.