Low-power multiple-bit upset tolerant memory optimization

  • Authors:
  • Seokjoong Kim;Matthew R. Guthaus

  • Affiliations:
  • University of California Santa Cruz, Santa Cruz, CA;University of California Santa Cruz, Santa Cruz, CA

  • Venue:
  • Proceedings of the International Conference on Computer-Aided Design
  • Year:
  • 2011

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Abstract

In this paper, we propose a framework for analyzing Soft Error Rates (SER) including Multiple-Bit Upsets (MBU). Then, using this framework, we optimize the soft error tolerant voltage (Vtol) and interleaving distance (ID) of low-power, error-tolerant memories. Experimental results show that the total power can be reduced by an average of 30.5% with Vtol optimization and an average of 40.9% by simultaneously considering Vtol and ID together when compared to worst-case design practices.