New Generation of Predictive Technology Model for Sub-45nm Design Exploration
ISQED '06 Proceedings of the 7th International Symposium on Quality Electronic Design
ICCAD '05 Proceedings of the 2005 IEEE/ACM International conference on Computer-aided design
Proceedings of the 43rd annual Design Automation Conference
Proceedings of the conference on Design, automation and test in Europe
The impact of random device variation on SRAM cell stability in sub-90-nm CMOS technologies
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Breaking the simulation barrier: SRAM evaluation through norm minimization
Proceedings of the 2008 IEEE/ACM International Conference on Computer-Aided Design
Proceedings of the Conference on Design, Automation and Test in Europe
A tutorial on particle filters for online nonlinear/non-GaussianBayesian tracking
IEEE Transactions on Signal Processing
A fast estimation of SRAM failure rate using probability collectives
Proceedings of the 2012 ACM international symposium on International Symposium on Physical Design
An efficient control variates method for yield estimation of analog circuits based on a local model
Proceedings of the International Conference on Computer-Aided Design
Cross entropy minimization for efficient estimation of SRAM failure rate
DATE '12 Proceedings of the Conference on Design, Automation and Test in Europe
Scalable and efficient analog parametric fault identification
Proceedings of the International Conference on Computer-Aided Design
Proceedings of the International Conference on Computer-Aided Design
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In this paper, a significant acceleration of estimating low-failure rate in a high-dimensional SRAM yield analysis is achieved using sequential importance sampling. The proposed method systematically, autonomously, and adaptively explores failure region of interest, whereas all previous works needed to resort to brute-force search. Elimination of brute-force search and adaptive trial distribution significantly improves the efficiency of failure-rate estimation of hitherto unsolved high-dimensional cases wherein a lot of variation sources including threshold voltages, channel-length, carrier mobility, etc. are simultaneously considered. The proposed method is applicable to wide range of Monte Carlo simulation analyses dealing with high-dimensional problem of rare events. In SRAM yield estimation example, we achieved 106 times acceleration compared to a standard Monte Carlo simulation for a failure probability of 3 x 10−9 in a six-dimensional problem. The example of 24-dimensional analysis on which other methods are ineffective is also presented.