Fast and accurate timing simulation with regionwise quadratic models of MOS I-V characteristics

Authors:
A. Dharchoudhury;S. M. Kang;K. H. Kim;S. H. Lee
Affiliations:
Dept. of Electrical & Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL;Dept. of Electrical & Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL;CAE Department, Samsung Electronics Co., Seoul, S. Korea;CAE Department, Samsung Electronics Co., Seoul, S. Korea
Venue:
ICCAD '94 Proceedings of the 1994 IEEE/ACM international conference on Computer-aided design
Year:
1994

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Abstract

This paper presents a technique called regionwise quadratic (RWQ) modeling that allows highly accurate MOS models, as well as measured I-V data, to be used in fast timing simulation. This technique significantly increases the accuracy of fast timing simulation while maintaining efficiency by permitting analytical solutions of node equations. A fast timing simulator using these RWQ models has been implemented. Several examples of RWQ modeling are provided, and comparisons of simulation results with SPICE3 are shown to demonstrate accuracy and efficiency. Speedups of two to three orders of magnitude for circuits containing up to 2000 transistors are observed.