An error tolerant CAM with nand match-line organization

  • Authors:
  • Aristides Efthymiou

  • Affiliations:
  • University of Ioannina, Ioannina, Greece

  • Venue:
  • Proceedings of the 23rd ACM international conference on Great lakes symposium on VLSI
  • Year:
  • 2013

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Abstract

Content Addressable Memories (CAMs) are valuable components in applications where fast, highly-associative searches are required. While common SRAMs can be protected from soft-errors using error-correcting codes (ECC), CAMs are much harder to protect against such effects. The main problem is that the comparison of a stored memory word to a search word, when both are encoded by ECCs, is far too complicated and expensive to be performed directly by circuits at each row of the CAM. The proposed design uses a modified NAND-type, dual match-line organization which keeps track of up to 1 bit mismatch per row. As CAM words are encoded using an ECC of Hamming distance of 3, a single bit error can be "corrected" during the search operation, by ignoring any single-bit mismatch. The design is analyzed in detail with regard to charge-sharing noise, speed and power and the cost of error-tolerance is investigated against a state-of-the art NAND-type CAM. Compared against the best-known, error-tolerant CAM, which uses a NOR match-line organization, the proposed circuit is faster and more energy efficient.