Dummy feature placement for chemical-mechanical polishing uniformity in a shallow trench isolation process

Authors:
Ruiqi Tian;Xiaoping Tang;D. F. Wong
Affiliations:
Department of Computer Sciences, University of Texas at Austin, Austin, TX and Motorola Inc., 3501 Ed Bluestein Blvd., Austin, TX;Department of Computer Sciences, University of Texas at Austin, Austin, TX;Department of Computer Sciences, University of Texas at Austin, Austin, TX
Venue:
Proceedings of the 2001 international symposium on Physical design
Year:
2001

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Abstract

Manufacturability of a design that is processed with shallow trench isolation (STI) depends on the uniformity of the chemical-mechanical polishing (CMP) step in STI. The CMP step in STI is a dual-material polish, for which all previous studies on dummy feature placement for single-material polish [3, 11, 1] are not applicable. Based on recent semi-physical models of polish pad bending [5], local polish pad compression [2, 10], and different polish rates for materials present in a dual-material polish [2, 13], this paper derives a time-dependent relation between post-CMP topography and layout pattern density for CMP in STI. Using the dependencies derived, the first formulation of dummy feature placement for CMP in STI is given as a nonlinear programming problem. An iterative approach is proposed to solve the dummy feature placement problem. Computational experience on four layouts from Motorola is given.