Computational geometry: an introduction
Computational geometry: an introduction
Delayed frontal solution for finite-element based resistance extraction
DAC '95 Proceedings of the 32nd annual ACM/IEEE Design Automation Conference
Extraction of circuit models for substrate cross-talk
ICCAD '95 Proceedings of the 1995 IEEE/ACM international conference on Computer-aided design
Using articulation nodes to improve the efficiency of finite-element based resistance extraction
DAC '96 Proceedings of the 33rd annual Design Automation Conference
Field Computation by Moment Methods
Field Computation by Moment Methods
Simulation Techniques and Solutions for Mixed-Signal Coupling in Integrated Circuits
Simulation Techniques and Solutions for Mixed-Signal Coupling in Integrated Circuits
Theoretical and practical validation of combined BEM/FEM substrate resistance modeling
Proceedings of the 2002 IEEE/ACM international conference on Computer-aided design
An improved direct boundary element method for substrate coupling resistance extraction
GLSVLSI '05 Proceedings of the 15th ACM Great Lakes symposium on VLSI
A green function-based parasitic extraction method for inhomogeneous substrate layers
Proceedings of the 42nd annual Design Automation Conference
Substrate resistance extraction with direct boundary element method
Proceedings of the 2005 Asia and South Pacific Design Automation Conference
Contact merging algorithm for efficient substrate noise analysis in large scale circuits
Proceedings of the 19th ACM Great Lakes symposium on VLSI
Methodology for efficient substrate noise analysis in large-scale mixed-signal circuits
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Exact closed-form expressions for substrate resistance and capacitance extraction in nanoscale VLSI
Microelectronics Journal
| Hi-index | 0.00 |
For present-day micro-electronic designs, it is becoming ever more important to accurately model substrate coupling effects. Basically, either a Finite Element Method (FEM) or a Boundary Element Method (BEM) can be used. The FEM is the most versatile and flexible whereas the BEM is faster, but requires a stratified, layout-independent doping profile for the substrate. Thus, the BEM is unable to properly model any specific, layout-dependent doping patterns that are usually present in the top layers of the substrate, such as channel stop layers. This paper describes a way to incorporate these doping patterns into our substrate model by combining a BEM for the stratified doping profiles with a 2D FEM for the top-level, layout-dependent doping patterns, thereby achieving improved flexibility compared to BEM and improved speed compared to FEM. The method has been implemented in the SPACE layout to circuit extractor and it has been successfully verified with two other tools.