BIST for Embedded Word-Oriented DRAM

  • Authors:
  • L. Zakrevski;M. Karpovsky;S. H. Yang

  • Affiliations:
  • -;-;-

  • Venue:
  • MTDT '98 Proceedings of the 1998 IEEE International Workshop on Memory Technology, Design and Testing
  • Year:
  • 1998

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Abstract

The problem of exhaustive test generation for detection of coupling faults between cells in word-oriented memories is considered. According to this fault model, contents of any w-bit memory word in a memory with n words, or ability to change this contents, is influenced by the contents of any other s-1 words in the memory. A near optimal iterative method for construction of test patterns is proposed. The systematic structure of the proposed test results in simple BIST implementations.