System-on-Chip Test Architectures: Nanometer Design for Testability
System-on-Chip Test Architectures: Nanometer Design for Testability
Test-length and TAM optimization for wafer-level reduced pin-count testing of core-based SoCs
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Proceedings of the 2009 International Conference on Computer-Aided Design
Framework for massively parallel testing at wafer and package test
ICCD'09 Proceedings of the 2009 IEEE international conference on Computer design
Testing TSV-based three-dimensional stacked ICs
Proceedings of the Conference on Design, Automation and Test in Europe
Contactless testing: possibility or pipe-dream?
Proceedings of the Conference on Design, Automation and Test in Europe
Proceedings of the International Conference on Computer-Aided Design
Challenges and emerging solutions in testing TSV-based 2 1/2D- and 3D-stacked ICs
DATE '12 Proceedings of the Conference on Design, Automation and Test in Europe
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Microelectronic wafer and die level testing have undergone significant changes in the past few years. This paper's first section describes today's leading edge characteristics for numerous areas of this test technology including the minimum I/O pad pitch, advances in contactor technologies, maximum number of I/Os probed, maximum number of die tested in parallel, the largest prober and substrates, and the maximum frequencies being tested at the wafer level. The second section will discuss the leading edge practices in three critical areas of wafer test: probe contactor cleaning, I/O pad damage minimization, and sorting good from bad die. The final section will present the communication methods between the design and the probe test organizations and some state-of-the-art examples for I/O pad designs..