General transistor-level methodology on VLSI low-power design

  • Authors:
  • Zuying Luo

  • Affiliations:
  • Beijing Normal University, Beijing, China

  • Venue:
  • GLSVLSI '06 Proceedings of the 16th ACM Great Lakes symposium on VLSI
  • Year:
  • 2006

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Abstract

In this work, we modify the Alpha-Power Law to accurately simulate BSIM3-70nm gate delay on transistor level. Combined with efficient power analysis methods, we develop one transistor-level simulator to efficient estimate performance and power for CMOS gates consisting of heterogeneous transistors. Furthermore, we propose a novel transistor-level optimization engine consisting of two-step algorithms. The former gate-space algorithm uses the clustering strategy to cut down algorithm complexity. The latter transistor-space algorithm employs fine granularity to pursue reducing more power consumption. Experiments show the following advantages: 1. Our transistor-level simulator takes average 1.0ms (on an ordinary PM1.4G-256M laptop computer) to analyze one gate and can accurately estimate circuit delay with only 2-7% worst-case error. 2. Our methodology is so general that it can analyze and optimize heterogeneous circuit in which each transistor may have its own different VT0, channel width and length. 3. In the transistor-level width+VT0+length-sized optimization, our engine takes feasible running time (856.4s for C7552) to cut down 22.58%(average) and 43.02%(maximum) leakage power caused by gate-level optimum solution nearly without penalty of active power.