Row/column redundancy to reduce SRAM leakage in presence of random within-die delay variation

Authors:
Maziar Goudarzi;Tohru Ishihara
Affiliations:
Kyushu University, Fukuoka, Japan;Kyushu University, Fukuoka, Japan
Venue:
Proceedings of the 13th international symposium on Low power electronics and design
Year:
2008

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Abstract

Traditionally, spare rows/columns have been used in two ways: either to replace too leaky cells to reduce leakage, or to substitute faulty cells to improve yield. In contrast, we first choose a higher threshold voltage (Vth) and/or gate-oxide thickness (Tox) for SRAM transistors at design time to reduce leakage, and then substitute the resulting too slow cells by spare rows/columns. We show that due to within-die delay variation of SRAM cells only a few cells violate target timing at higher Vth or Tox; we carefully choose the Vth and Tox values such that the original memory timing-yield remains intact for a negligible extra delay. On a commercial 90nm process assuming 3% variation in SRAM cell delay, we obtained 47% leakage reduction by adding only 5 redundant columns at negligible area, dynamic power and delay costs.