A set-based mapping strategy for flash-memory reliability enhancement

  • Authors:
  • Yuan-Sheng Chu;Jen-Wei Hsieh;Yuan-Hao Chang;Tei-Wei Kuo

  • Affiliations:
  • MediaTek Inc.;National Taiwan University of Science and Technology, R.O.C.;National Taiwan University, R.O.C.;National Taiwan University, R.O.C.

  • Venue:
  • Proceedings of the Conference on Design, Automation and Test in Europe
  • Year:
  • 2009

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Abstract

With wide applicability of flash memory in various application domains, reliability has become a very critical issue. This research is motivated by the needs to resolve the lifetime problem of flash memory and a strong demand in turning thrown-away flash-memory chips into downgraded products. We proposes a set-based mapping strategy with an effective implementation and low resource requirements, e.g., SRAM. A configurable management design and wear-leveling issue are considered. The behavior of the proposed method is also analyzed with respect to popular implementations in the industry. We show that the endurance of flash memory can be significantly improved by a series of experiments over a realistic trace. Our experiments show that the read performance is even largely improved.