A statistical model of logic gates for Monte Carlo simulation including on-chip variations

  • Authors:
  • Francesco Centurelli;Luca Giancane;Mauro Olivieri;Giuseppe Scotti;Alessandro Trifiletti

  • Affiliations:
  • Dipartimento di Ingegneria Elettronica, Università di Roma "La Sapienza", Roma, Italy;Dipartimento di Ingegneria Elettronica, Università di Roma "La Sapienza", Roma, Italy;Dipartimento di Ingegneria Elettronica, Università di Roma "La Sapienza", Roma, Italy;Dipartimento di Ingegneria Elettronica, Università di Roma "La Sapienza", Roma, Italy;Dipartimento di Ingegneria Elettronica, Università di Roma "La Sapienza", Roma, Italy

  • Venue:
  • PATMOS'07 Proceedings of the 17th international conference on Integrated Circuit and System Design: power and timing modeling, optimization and simulation
  • Year:
  • 2007

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Abstract

Process variations are becoming a paramount design problem in nano-scale VLSI. We present a framework for the statistical model of logic gates that describes both inter-die and intra-die variations of performance parameters such as propagation delay and leakage currents. This allows fast but accurate behavioral-level Monte-Carlo simulations, that could be useful for full-custom digital design optimization and yield prediction, and enables the development of a yield-aware digital design flow. The model can incorporate correlation between mismatch parameters and dependence on distance and position, and can be extracted by fitting of Monte-Carlo transistor level simulations. An example implementation using Verilog-A hardware description language in Cadence environment is presented.