Fundamentals of modern VLSI devices
Fundamentals of modern VLSI devices
WCDMA for UMTS: Radio Access for Third Generation Mobile Communications
WCDMA for UMTS: Radio Access for Third Generation Mobile Communications
Standby power management for a 0.18μm microprocessor
Proceedings of the 2002 international symposium on Low power electronics and design
Low power integrated scan-retention mechanism
Proceedings of the 2002 international symposium on Low power electronics and design
Power-constrained CMOS scaling limits
IBM Journal of Research and Development
Managing standby and active mode leakage power in deep sub-micron design
Proceedings of the 2004 international symposium on Low power electronics and design
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Reducing wakeup latency and energy of MTCMOS circuits via keeper insertion
Proceedings of the 13th international symposium on Low power electronics and design
ACM Transactions on Design Automation of Electronic Systems (TODAES)
Power gating: Circuits, design methodologies, and best practice for standard-cell VLSI designs
ACM Transactions on Design Automation of Electronic Systems (TODAES)
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Integrated circuits fabricated on a low-leakage process typically display lower performance due to the high threshold voltage (Vt) transistors. Higher performance microprocessors sacrifice power efficiency by decreasing Vt. We show that a processor built on a low Vt process can achieve the power-per-computation characteristics of one built using a high Vt process, by using a "drowsy" mode combining reverse body bias (RBB) and voltage collapse when idle. This approach also allows for higher peak performance, if needed. A simple power model is shown to accurately match the measured data; high-operational frequency is demonstrated when in active operation. The circuit techniques used to provide the RBB mode of operation are described and compared with other techniques such as multi-threshold CMOS. While both techniques can be effective for logic, the design effort for RBB is shown to be smaller, while reducing embedded static random access memory standby power without added size.