Gate Sizing and Replication to Minimize the Effects of Virtual Ground Parasitic Resistances in MTCMOS Designs

  • Authors:
  • Chanseok Hwang;Changwoo Kang;Massoud Pedram

  • Affiliations:
  • University of Southern California;University of Southern California;University of Southern California

  • Venue:
  • ISQED '06 Proceedings of the 7th International Symposium on Quality Electronic Design
  • Year:
  • 2006

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Abstract

The Multi-Threshold CMOS (MTCMOS) technique can significantly reduce sub-threshold leakage currents during the circuit sleep (standby) mode by adding high- Vth power switches (sleep transistors) to low-Vth logic cells. During the active mode of the circuit, the high-Vth transistors and the virtual ground network can be modeled as resistors, which in turn cause voltage of the virtual ground node to rise thereby degrading the switching speed of the logic cells. This paper introduces a new design methodology that minimizes the impact of virtual ground parasitic resistances on the performance of an MTCMOS circuit by using gate resizing and logic restructuring (i.e., gate replication.) Experimental results show that the proposed techniques are highly effective in making the MTCMOS circuits robust with respect to such parasitic resistance effects.