Combating NBTI Degradation via Gate Sizing

  • Authors:
  • Xiangning Yang;Kewal Saluja

  • Affiliations:
  • University of Wisconsin-Madison, USA;University of Wisconsin-Madison, USA

  • Venue:
  • ISQED '07 Proceedings of the 8th International Symposium on Quality Electronic Design
  • Year:
  • 2007

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Abstract

NBTI is becoming one of the dominant circuit reliability concerns in nano-scale technologies. We believe that designers can combat NBTI degradation using appropriate circuit constraints. This paper presents a design technique to tolerate NBTI degradation by gate sizing. We provide an NBTI-aware gate sizing problem formulation and propose a solution method. The experimental results for MCNC'91 benchmark circuits show that for NBTI tolerance the purposed method results in less than 1% area increase in most cases while a formulation based on traditional performance focused methods may lead to over 4% area increase.