Interactive presentation: Efficient computation of discharge current upper bounds for clustered sleep transistor sizing

  • Authors:
  • A. Sathanur;A. Calimera;L. Benini;A. Macii;E. Macii;M. Poncino

  • Affiliations:
  • Politecnico di Torino, Torino, ITALY;Politecnico di Torino, Torino, ITALY;Università di Bologna, Bologna, ITALY;Politecnico di Torino, Torino, ITALY;Politecnico di Torino, Torino, ITALY;Politecnico di Torino, Torino, ITALY

  • Venue:
  • Proceedings of the conference on Design, automation and test in Europe
  • Year:
  • 2007

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Abstract

Sleep transistor insertion is a key step in low power design methodologies for nanometer CMOS. In the clustered sleep transistor approach, a single sleep transistor is shared among a number of gates and it must be sized according to the maximum current that can be injected onto the virtual ground by the gates in the cluster. A conservative (upper bound) estimate of the maximum injected current is required in order to avoid excessive speed degradation and possible violations of timing constraints. In this paper we propose a scalable algorithm for tightening upper bound computation, with a controlled and tunable computational cost. The algorithm leverages the capabilities of state-of-the-art commercial timing analysis engines, and it is tightly integrated into standard industrial flow for leakage optimization. Benchmark results demonstrate the effectiveness and efficiency of our approach.