Row-based power-gating: a novel sleep transistor insertion methodology for leakage power optimization in nanometer CMOS circuits

  • Authors:
  • Ashoka Sathanur;Luca Benini;Alberto Macii;Enrico Macii;Massimo Poncino

  • Affiliations:
  • DAUIN, Politecnico di Torino, Torino, Italy;DEIS, Università di Bologna, Bologna, Italy;DAUIN, Politecnico di Torino, Torino, Italy;DAUIN, Politecnico di Torino, Torino, Italy;DAUIN, Politecnico di Torino, Torino, Italy

  • Venue:
  • IEEE Transactions on Very Large Scale Integration (VLSI) Systems
  • Year:
  • 2011

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Abstract

Leakage power has become a serious concern in nanometer CMOS technologies, and power-gating has shown to offer a viable solution to the problem with a small penalty in performance. This paper focuses on leakage power reduction through automatic insertion of sleep transistors for power-gating. In particular, we propose a novel, layout-aware methodology that facilitates sleep transistor insertion and virtual-ground routing on row-based layouts. We also introduce a clustering algorithm that is able to handle simultaneously timing and area constraints, and we extend it to the case of multi-Vt sleep transistors to increase leakage savings. The results we have obtained on a set of benchmark circuits show that the leakage savings we can achieve are, by far, superior to those obtained using existing power-gating solutions and with much tighter timing and area constraints.