Enabling fine-grain leakage management by voltage anchor insertion

  • Authors:
  • Pietro Babighian;Luca Benini;Alberto Macii;Enrico Macii

  • Affiliations:
  • Politecnico di Torino, Torino, Italy;Universitá di Bologna, Bologna, Italy;Politecnico di Torino, Torino, Italy;Politecnico di Torino, Torino, Italy

  • Venue:
  • Proceedings of the conference on Design, automation and test in Europe: Proceedings
  • Year:
  • 2006

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Abstract

Functional unit shutdown based on MTCMOS devices is effective for leakage reduction in aggressively scaled technologies. However, the applicability of MTCMOS-based shutdown in a synthesis-based design flow poses the challenge of interfacing logic blocks in shutdown mode with active units: The outputs of inactive gates can float at intermediate voltages, causing very large short-circuit currents in the active gates they drive.In this paper, we propose two novel low-overhead elementary cells that fully address this issue. These cells can be added to any synthesis library, and they can be inserted into a netlist at the boundary between shutdown and active regions. Our results show that: (i) Our cells solve the interfacing problem with minimum overhead; (ii) A non-intrusive design flow enhancement is sufficient to automatically insert interface cells in post-synthesis netlists.