End-to-End Test Strategy for Wireless Systems
Proceedings of the IEEE International Test Conference on Driving Down the Cost of Test
A Bulti-in Self-Test Strategy for Wireless Communication Systems
Proceedings of the IEEE International Test Conference on Driving Down the Cost of Test
Production Testing of Rf and System-On-A-Chip Devices for Wireless Communications (Artech House Microwave Library)
RF-BIST: Loopback Spectral Signature Analysis
DATE '03 Proceedings of the conference on Design, Automation and Test in Europe - Volume 1
A System-Level Alternate Test Approach for Specification Test of RF Transceivers in Loopback Mode
VLSID '05 Proceedings of the 18th International Conference on VLSI Design held jointly with 4th International Conference on Embedded Systems Design
A CMOS RF RMS Detector for Built-in Testing of Wireless Transceivers
VTS '05 Proceedings of the 23rd IEEE Symposium on VLSI Test
VTS '06 Proceedings of the 24th IEEE VLSI Test Symposium
An improved RF loopback for test time reduction
Proceedings of the conference on Design, automation and test in Europe: Proceedings
CMOS blocks for on-chip RF test
Analog Integrated Circuits and Signal Processing
Single-Measurement Diagnostic Test Method for Parametric Faults of I/Q Modulating RF Transceivers
VTS '08 Proceedings of the 26th IEEE VLSI Test Symposium
Journal of Electronic Testing: Theory and Applications
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This brief addresses the realization of an on-chip block for built-in testing of RF transceivers with the loopback method. Design issues and measurement results are discussed, giving practical insights into closing the signal path between transmitter (Tx) and receiver (Rx) sections. The circuit is intended for cost-efficient production testing of RF front-end blocks with on-chip power detectors and bit-error-rate analysis at baseband frequencies for integrated transceivers operating in the 1.9- to 2.4-GHz range. It can provide 40-200 MHz Tx-Rx frequency shifting and 26-42 dB continuous attenuation while consuming a 0.052-mm2 die area in 0.13-µm CMOS technology and ∼12 mW of power when activated in test mode.