Variational capacitance extraction and modeling based on orthogonal polynomial method

Authors:
Ruijing Shen;Sheldon X.-D. Tan;Jian Cui;Wenjian Yu;Yici Cai;Geng-Sheng Chen
Affiliations:
Department of Electrical Engineering, University of California, Riverside, CA;Department of Electrical Engineering, University of California, Riverside, CA;Department of Electrical Engineering, University of California, Riverside, CA;Department of Computer Science and Technology, Tsinghua University, Beijing, China;Department of Computer Science and Technology, Tsinghua University, Beijing, China;Application-Specific Integrated Circuit and System State-Key Laboratory, Department of Microelectronics, Fudan University, Shanghai, China
Venue:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Year:
2010

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Abstract

In this paper, we propose a novel statistical capacitance extraction method for interconnect conductors considering process variations. The new method is called statCap, where orthogonal polynomials are used to represent the statistical processes in a deterministic way. We first show how the variational potential coefficient matrix is represented in a first-order form using Taylor expansion and orthogonal decomposition. Then, an augmented potential coefficient matrix, which consists of the coefficients of the polynomials, is derived. After this, corresponding augmented system is solved to obtain the variational capacitance values in the orthogonal polynomial form. Finally, we present a method to extend statCap to the second-order form to give more accurate results without loss of efficiency compared to the linear models. We show the derivation of the analytic second-order orthogonal polynomials for the variational capacitance integral equations. Experimental results show that statCap is two orders of magnitude faster than the recently proposed statistical capacitance extraction method based on the spectral stochastic collocation approach and many orders of magnitude faster than the Monte Carlo method for several practical conductor structures.