Yield enhancement for 3D-stacked memory by redundancy sharing across dies

Authors:
Li Jiang;Rong Ye;Qiang Xu
Affiliations:
The Chinese University of Hong Kong, Shatin, N. T., Hong Kong;The Chinese University of Hong Kong, Shatin, N. T., Hong Kong;The Chinese University of Hong Kong, Shatin, N. T., Hong Kong
Venue:
Proceedings of the International Conference on Computer-Aided Design
Year:
2010

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Abstract

Three-dimensional (3D) memory products are emerging to fulfill the ever-increasing demands of storage capacity. In 3D-stacked memory, redundancy sharing between neighboring vertical memory blocks using short through-silicon vias (TSVs) is a promising solution for yield enhancement. Since different memory dies are with distinct fault bitmaps, how to selectively matching them together to maximize the yield for the bonded 3D-stacked memory is an interesting and relevant problem. In this paper, we present novel solutions to tackle the above problem. Experimental results show that the proposed methodology can significantly increase memory yield when compared to the case that we only bond self-reparable dies together.