Experimental measurement of a novel power gating structure with intermediate power saving mode

  • Authors:
  • Suhwan Kim;Stephen V. Kosonocky;Daniel R. Knebel;Kevin Stawiasz

  • Affiliations:
  • Seoul National Univestiy, Seoul, Korea;IBM Thomas J. Watson Research Center, Yorktown Heights, NY;IBM Thomas J. Watson Research Center, Yorktown Heights, NY;IBM Thomas J. Watson Research Center, Yorktown Heights, NY

  • Venue:
  • Proceedings of the 2004 international symposium on Low power electronics and design
  • Year:
  • 2004

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Abstract

A novel power gating structure is proposed for low-power, high-performance VLSI. This power gating structure supports an intermediate power saving mode as well as a traditional power cut-off mode. To evaluate our power gating structure, we design and fabricate three different macros in 0.13 um CMOS bulk technology. Our measurement results show that the additional intermediate power-mode allows us to cover various power-performance trade-off regimes, compared to conventional power gating structures.