Testing semiconductor memories: theory and practice
Testing semiconductor memories: theory and practice
Detecting Delay Flaws by Very-Low-Voltage Testing
Proceedings of the IEEE International Test Conference on Test and Design Validity
High volume microprocessor test escapes, an analysis of defects our tests are missing
ITC '98 Proceedings of the 1998 IEEE International Test Conference
Testing for resistive opens and stuck opens
Proceedings of the IEEE International Test Conference 2001
Comparison of IDDQ Testing and Very-Low Voltage Testing
ITC '02 Proceedings of the 2002 IEEE International Test Conference
Industrial Evaluation of Stress Combinations for March Tests applied to SRAMs
ITC '99 Proceedings of the 1999 IEEE International Test Conference
Defect-Oriented Dynamic Fault Models for Embedded-SRAMs
ETW '03 Proceedings of the 8th IEEE European Test Workshop
The Pros and Cons of Very-Low-Voltage Testing: An Analysis based on Resistive Bridging Faults
VTS '04 Proceedings of the 22nd IEEE VLSI Test Symposium
New Test Methodology for Resistive Open Defect Detection in Memory Address Decoders
VTS '04 Proceedings of the 22nd IEEE VLSI Test Symposium
The State-of-Art and Future Trends in Testing Embedded Memories
MTDT '04 Proceedings of the Records of the 2004 International Workshop on Memory Technology, Design and Testing
Systematic Defects in Deep Sub-Micron Technologies
ITC '04 Proceedings of the International Test Conference on International Test Conference
Test quality analysis and improvement for an embedded asynchronous FIFO
Proceedings of the conference on Design, automation and test in Europe
Test set development for cache memory in modern microprocessors
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Impact of Resistive-Bridging Defects in SRAM at Different Technology Nodes
Journal of Electronic Testing: Theory and Applications
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This paper presents the effectiveness of various stress conditions (mainly voltage and frequency) on detecting the resistive shorts and open defects in deep sub-micron embedded memories in an industrial environment. Simulation studies on very-low voltage, high voltage and at-speed testing show the need of the stress conditions for high quality products; i.e., low defect-per-million (DPM) level, which is driving the semiconductor market today.The above test conditions have been validated to screen out bad devices on real silicon (a test-chip) built on CMOS 0.18 um technology.IFA (inductive fault analysis) based simulation technique leads to an efficient fault coverage and DPM estimator, which helps the customers upfront to make decisions on test algorithm implementations under different stress conditions in order to reduce the number of test escapes.