New Test Methodology for Resistive Open Defect Detection in Memory Address Decoders

  • Authors:
  • Mohamed Azimane;Ananta K. Majhi

  • Affiliations:
  • -;-

  • Venue:
  • VTS '04 Proceedings of the 22nd IEEE VLSI Test Symposium
  • Year:
  • 2004

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Abstract

Intra-gate resistive open defects not only cause sequentialbehaviour in CMOS memory address decoders, but alsolead to delay behaviour. This paper evaluates the faultcoverage of the resistive open defects in the memory addressdecoders. It shows that both the strong and the weak opendefects are not completely covered by applying the well-knownmarch tests and special test pattern sequencespublished in the literature. We demonstrate that the faultcoverage is increased by varying the duty cycle of theinternal clock of the address decoder. For the self-timedmemories, we introduce a simple DFT technique to controlthe duty cycle of the internal clock whichactivates/deactivates the word lines. Using defect-orientedtest, we also created a fault dictionary based on the defectlocation, transistor types, the terminal name and also thefaulty behaviour. The fault dictionary in combination withthe bit-map fail data will facilitate the localization of theopen defects.