BiST Model for IC RF-Transceiver Front-End
DFT '03 Proceedings of the 18th IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems
A Current Sensor for On-Chip, Non-Intrusive Testing of RF Systems
VLSID '04 Proceedings of the 17th International Conference on VLSI Design
Feature Extraction Based Built-In Alternate Test of RF Components Using a Noise Reference
VTS '04 Proceedings of the 22nd IEEE VLSI Test Symposium
Production Testing of Rf and System-On-A-Chip Devices for Wireless Communications (Artech House Microwave Library)
An Ultra-Fast, On-Chip BiST for RF Low Noise Amplifiers
VLSID '05 Proceedings of the 18th International Conference on VLSI Design held jointly with 4th International Conference on Embedded Systems Design
An On-Chip Spectrum Analyzer for Analog Built-In Testing
Journal of Electronic Testing: Theory and Applications
Fault diagnosis of a GHz CMOS LNA using high-speed ADC-based BIST
DBT '04 Proceedings of the 2004 IEEE International Workshop on Defect Based Testing
Design of Analog CMOS Integrated Circuits
Design of Analog CMOS Integrated Circuits
Fault Coverage Analysis of Peak-Detector Based BIST for RF LNAs
Journal of Electronic Testing: Theory and Applications
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This paper presents a novel technique for measuring the electrical characteristics of analogue circuits, based on measuring the temperature at the silicon surface close to the circuit under test. As a detailed example, the paper analyses how the gain of an amplifier can be observed through temperature measurements. Experimental results validate the feasibility of the technique. Simulated results show how this technique can be used to measure the bandwidth and central frequency of a 2.4GHz low noise amplifier (LNA) designed in a 0.35@mm standard CMOS technology.