High speed gate level synchronous full adder designs

  • Authors:
  • Padmanabhan Balasubramanian;Nikos E. Mastorakis

  • Affiliations:
  • School of Computer Science, The University of Manchester, Manchester, United Kingdom;Department of Computer Science, Military Institutions of University Education, Hellenic Naval Academy, Piraeus, Greece

  • Venue:
  • WSEAS Transactions on Circuits and Systems
  • Year:
  • 2009

Quantified Score

Hi-index 0.01

Visualization

Abstract

Addition forms the basis of digital computer systems. Three novel gate level full adder designs, based on the elements of a standard cell library are presented in this work: one design involving XNOR and multiplexer gates (XNM), another design utilizing XNOR, AND, Inverter, multiplexer and complex gates (XNAIMC) and the third design incorporating XOR, AND and complex gates (XAC). Comparisons have been performed with many other existing gate level full adder realizations. Based on extensive simulations with a 32-bit carry-ripple adder implementation; targeting three process, voltage and temperature (PVT) corners of the high speed (low Vt) 65nm STMicroelectronics CMOS process, it was found that the XAC based full adder is found to be delay efficient compared to all its gate level counterparts, even in comparison with the full adder cell available in the library. The XNM based full adder is found to be area efficient, while the XNAIMC based full adder offers a slight compromise with respect to speed and area over the other two proposed adders.