Analysis and future trend of short-circuit power

  • Authors:
  • K. Nose;T. Sakurai

  • Affiliations:
  • Inst. of Ind. Sci., Tokyo Univ.;-

  • Venue:
  • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
  • Year:
  • 2006

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Abstract

A closed-form expression for short-circuit power dissipation of CMOS gates is presented which takes short-channel effects into consideration. The calculation results show good agreement with the SPICE simulation results over wide range of load capacitance and channel length. The change in the short-circuit power, PS, caused by the scaling in relation to the charging and discharging power, PD , is discussed and it is shown that basically power ratio, PS /(PD+PS), will not change with scaling if V TH/VDD is kept constant. This paper also handles the short-circuit power of series-connected MOSFET structures which appear in NAND and other complex gates