New Graphical IDDQ Signatures Reduce Defect Level and Yield Loss

  • Authors:
  • Lan Rao;Michael L. Bushnell;Vishwani D. Agrawal

  • Affiliations:
  • -;-;-

  • Venue:
  • VLSID '03 Proceedings of the 16th International Conference on VLSI Design
  • Year:
  • 2003

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Abstract

The measured IDDQ current as a function of vectors isdefined here as the IDDQ signature of a chip. We examinedthe IDDQ signatures of a large number of SEMATECHchips that have been classified us good or bud by a combineddecision from functional, delay and scan tests. We findthat a single IDDQ threshold, whether absolute or differential, cannot separate good/bud chips with any desirableaccuracy, because the good chip signature can be any oneof several well-defined graphs. In general, the signature ofa good chip is found to contain discrete levels (or bands)of varying widths and separations. A faulty chip almostalways displays noise and glitches in the band structure.Bused on observations, we develop a set of five graphicalcriteria, which provide lower defect level and yield losscompared to other non-IDDQ test methods. The reason isthat the graphical procedure customizes the decision for thechip-under-test, and may substantially reduce the usage ofother conventional tests.