Soft-error Monte Carlo modeling program, SEMM
IBM Journal of Research and Development - Special issue: terrestrial cosmic rays and soft errors
Cost reduction and evaluation of temporary faults detecting technique
DATE '00 Proceedings of the conference on Design, automation and test in Europe
Upset-Tolerant CMOS SRAM Using Current Monitoring: Prototype and Test Experiments
Proceedings of the IEEE International Test Conference on Driving Down the Cost of Test
A Hierarchical Architecture for Concurrent Soft Error Detection Based on Current Sensing
IOLTW '02 Proceedings of the Proceedings of The Eighth IEEE International On-Line Testing Workshop (IOLTW'02)
Soft Delay Error Effects in CMOS Combinational Circuits
VTS '04 Proceedings of the 22nd IEEE VLSI Test Symposium
SBCCI '05 Proceedings of the 18th annual symposium on Integrated circuits and system design
A design approach for radiation-hard digital electronics
Proceedings of the 43rd annual Design Automation Conference
A delay-efficient radiation-hard digital design approach using CWSP elements
Proceedings of the conference on Design, automation and test in Europe
Mitigating Soft Errors in SRAM Address Decoders Using Built-in Current Sensors
Journal of Electronic Testing: Theory and Applications
Efficient error detection codes for multiple-bit upset correction in SRAMs with BICS
ACM Transactions on Design Automation of Electronic Systems (TODAES)
Reliability analysis of memories protected with BICS and a per-word parity bit
ACM Transactions on Design Automation of Electronic Systems (TODAES)
A radiation tolerant phase locked loop design for digital electronics
ICCD'09 Proceedings of the 2009 IEEE international conference on Computer design
Circuit-level design approaches for radiation-hard digital electronics
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
A New Recovery Scheme Against Short-to-Long Duration Transient Faults in Combinational Logic
Journal of Electronic Testing: Theory and Applications
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In this paper we propose a new Built in Current Sensor (BICS) to detect single event upsets in SRAM. The BICS is designed and validated for 100nm process technology. The BICS reliability analysis for process, voltage, temperature, and power supply noise are provided. This BICS detect various shapes of current pulses generated due to particle strike. The BICS power consumption and area overhead are also provided. This BICS found to be very reliable for process, voltage and temperature variation and under stringent noise conditions.