MOSFET modeling with SPICE: principles and practice
MOSFET modeling with SPICE: principles and practice
Fundamentals of modern VLSI devices
Fundamentals of modern VLSI devices
Design Challenges of Technology Scaling
IEEE Micro
Statistical analysis of subthreshold leakage current for VLSI circuits
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Parametric yield estimation considering leakage variability
Proceedings of the 41st annual Design Automation Conference
Proceedings of the 2004 international symposium on Low power electronics and design
Modeling and estimation of full-chip leakage current considering within-die correlation
Proceedings of the 44th annual Design Automation Conference
Device-aware yield-centric dual-Vt design under parameter variations in nanoscale technologies
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
NBTI tolerant microarchitecture design in the presence of process variation
Proceedings of the 41st annual IEEE/ACM International Symposium on Microarchitecture
Full-chip model for leakage-current estimation considering within-die correlation
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
A fault-tolerant interconnect mechanism for NMR nanoarchitectures
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Statistical full-chip total power estimation considering spatially correlated process variations
Integration, the VLSI Journal
Leak-Gauge: A late-mode variability-aware leakage power estimation framework
Microprocessors & Microsystems
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In this paper we propose an accurate estimation and modeling of total circuit leakage distribution, considering both inter- and intra-die variations (variation in L, T/sub ox/ and random dopant fluctuation). Since, the total leakage in a circuit depends on leakage in a transistor, integration of transistors in a logic gate, and the gate topology in a circuit block, we model the total circuit leakage distribution at all levels of circuit design, while taking the different correlations among transistors, logic gates, circuit topology, and input vectors into account. The proposed model accurately estimates both statistical information (mean and variance) and the shape of the leakage distribution. We have verified the model using Monte Carlo simulation using devices of 50nm effective length and analyzed the results to enumerate the effect of different process parameters on individual components of total leakage.