A commitment-based management strategy for the performance and reliability enhancement of flash-memory storage systems

  • Authors:
  • Yuan-Hao Chang;Tei-Wei Kuo

  • Affiliations:
  • National Taiwan University, Taipei, Taiwan, R.O.C.;National Taiwan University, Taipei, Taiwan, R.O.C.

  • Venue:
  • Proceedings of the 46th Annual Design Automation Conference
  • Year:
  • 2009

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Abstract

Cost has been a major driving force in the development of the flash memory technology, but has also introduced serious challenges on reliability and performance for future products. In this work, we propose a commitment-based management strategy to resolve the reliability problem of many flash-memory products. A three-level address translation architecture with an adaptive block mapping mechanism is proposed to accelerate the address translation process with a limited amount of the RAM usage. Parallelism of operations over multiple chips is also explored with the considerations of the write constraints of multi-level-cell flash memory chips.