A low power SRAM using auto-backgate-controlled MT-CMOS

  • Authors:
  • Koji Nii;Hiroshi Makino;Yoshiki Tujihashi;Chikayoshi Morishima;Yasushi Hayakawa;Hiroyuki Nunogami;Takahiko Arakawa;Hisanori Hamano

  • Affiliations:
  • Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo, 664-8641, Japan;Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo, 664-8641, Japan;Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo, 664-8641, Japan;Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo, 664-8641, Japan;Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo, 664-8641, Japan;Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo, 664-8641, Japan;Tokushima Bunri University, Shido-cho, Kanagawa, 769-21, Japan;Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo, 664-8641, Japan

  • Venue:
  • ISLPED '98 Proceedings of the 1998 international symposium on Low power electronics and design
  • Year:
  • 1998

Quantified Score

Hi-index 0.00

Visualization

Abstract

We have been proposed a low power SRAM using an effective method called “ABC-MT-CMOS” [1]. It controls the backgates to reduce the leakage current when the SRAM is not activated (sleep mode) while retaining the data stored in the memory cells. We also adopted a “CSB Scheme” which clamps both the source lines of the memory cell array and the bit lines. We designed and fabricated test chips containing a 32K-bit gate array SRAM. The experimental results show that the leakage current is reduced to 1/1000 in sleep mode. The active power is 0.27 mW/MHz at 1 V, which is a reduction of 1/12 of a conventional SRAM with a 3.3 V.