On effective IDDQ Testing of low-voltage CMOS circuits using leakage control techniques

  • Authors:
  • Zhanping Chen;Liqiong Wei;Kaushik Roy

  • Affiliations:
  • Intel Corp., Hillsboro, OR;Intel Corp., Hillsboro, OR;Purdue Univ., West Lafayette, IN

  • Venue:
  • IEEE Transactions on Very Large Scale Integration (VLSI) Systems
  • Year:
  • 2001

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Abstract

The use of low-threshold devices in low0voltage CMOS circuits leads to an exponential increase in the intrinsic leakage current. This threatens the effectiveness of IDDQ testing for such low-voltage circuits because it is difficult to differentiate a defect-free circuit from defective circuits. Recently, several leakage control techniques have been proposed to reduce intrinsic leakage current, which may benefit IDDQ testing. In this paper, we investigate the possibilities of applying different leakage control techniques to improve the fault coverage of IDDQ testing. Results on a large number of benchmarks indicate that dual-threshold and vector control techniques can be very effective in improving fault coverage for IDDQ testing for some circuits.