Analyzing Soft Errors in Leakage Optimized SRAM Design

  • Authors:
  • V. Degalahal;N. Vijaykrishnan;M. J. Irwin

  • Affiliations:
  • -;-;-

  • Venue:
  • VLSID '03 Proceedings of the 16th International Conference on VLSI Design
  • Year:
  • 2003

Quantified Score

Hi-index 0.00

Visualization

Abstract

Reducing leakage power and improving the reliability ofdata stored in the memory cells are both becomingchallenging as technology scales down. While the smallerthreshold voltages causes increased leakage, smallersupply voltages and node capacitances can be a problemfor soft errors. This work compares the soft error rates ofsome recently proposed SRAM leakage optimizationapproaches. Our results using designs in 70nmtechnology show that many of these approaches mayincrease the soft error rates as compared to a standard6T SRAM. Further, we demonstrate that there is atradeoff between optimizing the leakage power andimproving the immunity to soft error.