Analysis of IR-Drop Scaling with Implications for Deep Submicron P/G Network Designs

  • Authors:
  • Amir H. Ajami;Kaustav Banerjee;Amit Mehrotra;Massoud Pedram

  • Affiliations:
  • -;-;-;-

  • Venue:
  • ISQED '03 Proceedings of the 4th International Symposium on Quality Electronic Design
  • Year:
  • 2003

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Abstract

This paper presents a detailed analysis of the power-supplyvoltage (IR) drop scaling in DSM technologies. For the first time, the effectsof temperature, electromigration and interconnect technology scaling(including resistivity increase of Cu interconnects due to electron surfacescattering and finite barrier thickness) are taken into consideration duringthis analysis. It is shown that the IR-drop effect in the power/ground (P/G)network increases rapidly with technology scaling, and using well-knowncounter measures such as wire-sizing and decoupling capacitor insertionwith resource allocation schemes that are typically used in the presentdesigns may not be sufficient to limit the voltage fluctuations over the powergrid for future technologies. It is also shown that such voltage drops onpower lines of switching devices in a clock network can introducesignificant amount of skew which in turn degrades the signal integrity.