Reliability challenges for 45nm and beyond

  • Authors:
  • J. W. McPherson

  • Affiliations:
  • Texas Instruments, Inc., Dallas, TX

  • Venue:
  • Proceedings of the 43rd annual Design Automation Conference
  • Year:
  • 2006

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Abstract

Scaling, for enhanced performance and cost reduction, has pushed existing CMOS materials much closer to their intrinsic reliability limits.This will require that designers will have to be very careful with: high current densities,voltage overshoots, localized hot spots on the chip, high duty-cycle applications, and high thermal-resistance packaging.In addition to the reliability issues, interconnect RC time-delay will worsen with scaling because Cu resistivity is expected to increase due to surface and grain boundary scattering in very narrow interconnects.Also, the low-k interconnect-dielectric introduction rate has been much slower than ITRS roadmap forecasts.