A robust finite-point based gate model considering process variations

Authors:
Alex Mitev;Dinesh Ganesan;Dheepan Shanmugasundaram;Yu Cao;Janet M. Wang
Affiliations:
University of Arizona at Tucson, Tucson, Arizona;Arizona State University, Tempe, Arizona;University of Arizona at Tucson, Tucson, Arizona;Arizona State University, Tempe, Arizona;University of Arizona at Tucson, Tucson, Arizona
Venue:
Proceedings of the 2007 IEEE/ACM international conference on Computer-aided design
Year:
2007

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Abstract

This paper proposes a robust gate model based on a finite-point modeling scheme. With current source model (CSM) framework, a robust, finite-point gate model is constructed. The new model depends on the selective points of I-V curves of gates. Thus, it implicitly incorporates the variation related parameters into finite points. In addition, to provide good accuracy on output waveform, the new model creates the input and output capacitance elements as nonlinear dependency on input/output waveform and process variation parameters. Experimental results show that the generated gate model has less than 3.7% error at mean, less than 6.2% error at variance and less than 5.8% at 90% percentile for cumulative density functions (CDFs).