Analysis and mitigation of NBTI-impact on PVT variability in repeated global interconnect performance

  • Authors:
  • Basab Datta;Wayne Burleson

  • Affiliations:
  • University of Massachusetts-Amherst, Amherst, MA, USA;University of Massachusetts-Amherst, Amherst, MA, USA

  • Venue:
  • Proceedings of the 20th symposium on Great lakes symposium on VLSI
  • Year:
  • 2010

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Abstract

Repeated interconnects remain the design choice for high-performance global communication due to their clearly defined performance metrics and smooth amalgamation to the VLSI CAD flow. Simultaneous variability in process-voltage-temperature (PVT) causes interconnect performance to fluctuate from its nominal value and hence it's an essential analysis needed to decide on timing margins for global wires. Negative Bias Temperature Instability (NBTI) has emerged as the most compelling device reliability concern in deep sub-micron technologies. In this paper, we thoroughly investigate the effects on NBTI-stress on PVT-induced variability in repeated global interconnect performance. The delay-spread due to PVT can deviate by 5-12% in the presence of NBTI stress. We propose 2 schemes to mitigate NBTI-stress effects on interconnect-delay and re-align the delay-distribution with its nominal state. The 1st involves upsizing all repeaters uniformly. A 5% size increment is found to be sufficient to counter the worst-case realistic deviation in delay-spread. The 2nd is a dynamic solution which involves using an NBTI detector circuit to monitor signal activity and assess device-status over a portion of the wire and increasing the drive strength of tunable buffers in the event of NBTI-stress.