Bringing NoCs to 65 nm

  • Authors:
  • Antonio Pullini;Federico Angiolini;Srinivasan Murali;David Atienza;Giovanni De Micheli;Luca Benini

  • Affiliations:
  • Politecnico di Torino;Università di Bologna;École Polytechnique Fédérale de Lausanne;Universidad Complutense de Madrid;École Polytechnique Fédérale de Lausanne;Università di Bologna

  • Venue:
  • IEEE Micro
  • Year:
  • 2007

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Abstract

Very deep submicron process technologies are ideal application fields for NoCs, which offer a promising solution to the scalability problem. This article sheds light on the benefits and challenges of NoC-based interconnect design in nanometer CMOS. The authors present experimental results from fully working 65-nm NoC designs and a detailed scalability analysis.