DABISR: a defect-aware built-in self-repair scheme for single/multi-port RAMs in SoCs

  • Authors:
  • Tsu-Wei Tseng;Yu-Jen Huang;Jin-Fu Li

  • Affiliations:
  • Advanced Reliable Systems Laboratory, Department of Electrical Engineering, National Central University, Jhongli, Taiwan;Advanced Reliable Systems Laboratory, Department of Electrical Engineering, National Central University, Jhongli, Taiwan;Advanced Reliable Systems Laboratory, Department of Electrical Engineering, National Central University, Jhongli, Taiwan

  • Venue:
  • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems - Special section on the ACM IEEE international conference on formal methods and models for codesign (MEMOCODE) 2009
  • Year:
  • 2010

Quantified Score

Hi-index 0.00

Visualization

Abstract

Built-in self-repair (BISR) techniques are widely used to enhance the yield of embedded random access memories (RAMs). Fault-location ability of test algorithms executed by a BISR circuit has heavy impact on the repair efficiency of the BISR circuit. This paper proposes a defect-aware BISR (DABISR) scheme for single-port RAMs (SPRAMs) and multi-port RAMs (MPRAMs) in system chips. Multiple RAMs can share a DABISR such that the area cost of DABISR is drastically reduced. We also present two defect-location algorithms (DLAs) for identification of bridge defects between word-lines and bit-lines of MPRAMs. The DABISR can perform DLAs to locate bridge defects such that it can provide high repair efficiency. For example, simulation results show that if a faulty two-port RAM has 20% inter-port faults, the DLAs can help to gain 8.4-14.4% increase of repair rate for different redundancy configurations. In comparison with an existing shared BISR scheme, however, the DABISR only incurs about 0.34% additional area overhead to support the function of DLAs.