Analysis and comparison in the energy-delay-area domain of nanometer CMOS flip-flops: part I-methodology and design strategies

  • Authors:
  • Massimo Alioto;Elio Consoli;Gaetano Palumbo

  • Affiliations:
  • Dipartimento di Ingegneria dell'Informazione, Università di Siena, Siena, Italy and Berkeley Wireless Research Center-Electrical Engineering and Computer Science Department, University of Cal ...;Dipartimento di Ingegneria Elettrica, Elettronica e dei Sistemi, Università di Catania, Catania, Italy;Dipartimento di Ingegneria Elettrica, Elettronica e dei Sistemi, Università di Catania, Catania, Italy

  • Venue:
  • IEEE Transactions on Very Large Scale Integration (VLSI) Systems
  • Year:
  • 2011

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Abstract

In this paper (split into Parts I and II), an extensive comparison of existing flip-flop (FF) classes and topologies is carried out. In contrast to previous works, analysis explicitly accounts for effects that arise in nanometer technologies and affect the energy-delay-area tradeoff (e.g., leakage and the impact of layout and interconnects). Compared to previous papers on FFs comparison, the analysis involves a significantly wider range of FF classes and topologies. In particular, in this Part I, the comparison strategy, which includes the simulation setup, the energy-delay estimation methodology, and an overview of an optimum design strategy, together with the introduction of the analyzed FF classes and topologies, are reported.