ELIAD: efficient lithography aware detailed routing algorithm with compact and macro post-OPC printability prediction

  • Authors:
  • Minsik Cho;Kun Yuan;Yongchan Ban;David Z. Pan

  • Affiliations:
  • IBM T.J. Watson Research Center, Yorktown Heights, NY and Electrical and Computer Engineering Department, The University of Texas at Austin, Austin, TX;Electrical and Computer Engineering Department, The University of Texas at Austin, Austin, TX;Electrical and Computer Engineering Department, The University of Texas at Austin, Austin, TX;Electrical and Computer Engineering Department, The University of Texas at Austin, Austin, TX

  • Venue:
  • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
  • Year:
  • 2009

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Abstract

In this paper, we present an efficient lithography aware detailed (ELIAD) router to enhance silicon image after optical proximity correction (OPC) in a correct-by-construction manner. We first quantitatively show that a pre-OPC litho-metric is highly uncorrelated with a post-OPC metric, which stresses the importance of a post-OPC litho-metric for design-time optimization. We then propose a compact post-OPC litho-metric for a detailed router (DR) based on statistical characterization, where the interferences among predefined litho-prone shapes are captured as a lookup table. Our litho-metric derived from the characterization shows high fidelity to the total edge placement error (EPE) in large scale, compared with Calibre OPC/optical rule check. Therefore, ELIAD powered by the proposed litho-metric can enhance the overall post-OPC printed silicon image. Experimental results on 65-nm industrial circuits show that ELIAD outperforms a rip-up/rerouting approach such as Resolution-enhancement-technique-Aware Detailed Routing with 8× more EPE hot spot reduction and 12× speedup. Moreover, compared with a conventional DR, ELIAD is only about 50% slower.