Estimation of defect-free IDDQ in submicron circuits using switch level simulation

  • Authors:
  • Peter C. Maxwell;Jeff Rearick

  • Affiliations:
  • -;-

  • Venue:
  • ITC '98 Proceedings of the 1998 IEEE International Test Conference
  • Year:
  • 1998

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Abstract

This paper presents a switch-level simulation-basedmethod for estimating quiescent current values. Thesimulator identifies transistors that are in the proper stateto experience leakage mechanisms. This information iscombined with data about both the size of thesetransistors and various process parameters in order tocalculate the actual I DDQ value. SPICE simulationresults are presented on a variety of circuits to bothcalibrate the simulator, and to demonstrate state, time andsequence dependencies of circuits. Some preliminaryresults are also given for an actual production chip.