Increasing the IDDQ Test Resolution Using Current Prediction

  • Authors:
  • Pramodchandran N. Variyam

  • Affiliations:
  • -

  • Venue:
  • ITC '00 Proceedings of the 2000 IEEE International Test Conference
  • Year:
  • 2000

Quantified Score

Hi-index 0.00

Visualization

Abstract

The Variations in IDDQ due to process disturbances forsub-micron ICs is comparable to magnitude of defectinduced currents. This is making traditional IDDQ testingineffective in detecting defects in sub-micron ICs. Thispaper presents a methodology called current predictionfor enhancing the effectiveness of IDDQ testing. In theproposed methodology, a set of IDDQ measurements areperformed on the device and the value of each IDDQcurrent are predicted using regression models. Absolutevalue of the difference between measured and predictedIDDQ (residuals of current prediction) are used foridentifying defective devices. The residuals of currentprediction are very sensitive to the defect currents and isinsensitive to process variations thus increasing the IDDQtest resolution. This technique is compared withtraditional and delta IDDQ testing techniques using theproduction test data from two different ICs. Results showthat considerable improvement in the IDDQ test qualitycan be achieved with the proposed technique.