Statistical design and optimization of SRAM cell for yield enhancement

Authors:
S. Mukhopadhyay;H. Mahmoodi;K. Roy
Affiliations:
Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA;Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA;Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Venue:
Proceedings of the 2004 IEEE/ACM International conference on Computer-aided design
Year:
2004

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Abstract

We have analyzed and modeled the failure probabilities of SRAM cells due to process parameter variations. A method to predict the yield of a memory chip based on the cell failure probability is proposed. The developed method is used in an early stage of a design cycle to minimize memory failure probability by statistically sizing of SRAM cell.